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Nath, K. G.; Shimoyama, Iwao; Sekiguchi, Tetsuhiro; Baba, Yuji
Journal of Electron Spectroscopy and Related Phenomena, 144-147, p.323 - 326, 2005/06
Times Cited Count:5 Percentile:27.33(Spectroscopy)The effect of laser annealing on electronic atructures and molecular orientation for poly(dimethylsilane), {PDMS, [Si(CH)]} has been studied by synchrotron radiation photoemission and photoabsorption spectroscopy. Prior to annealing, PDMS powder was mounted on the basal plane of highly oriented pyrolytic graphite. Both Si 1s X-ray photoemission spectroscopy and near-edge X-ray absorption fine structure (NEXAFS) spectroscopy at Si 1s edge show that electronic structures have been modified due to annealing. Furthermore, the angle-dependent NEXAFS spectra clearly indicate that the annealed products maintain a specific orientation. Interestingly, no such kind of orientation is present in as-received PDMS powder as no angle-dependency is observed before annealing.